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dc.contributor.author |
Glinchuk, K.D. |
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dc.contributor.author |
Litovchenko, N.M. |
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dc.contributor.author |
Strilchuk, O.N. |
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dc.date.accessioned |
2017-05-28T08:49:56Z |
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dc.date.available |
2017-05-28T08:49:56Z |
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dc.date.issued |
2003 |
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dc.identifier.citation |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 71.55. E; 78.55. E |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118029 |
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dc.description.abstract |
An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD₀X= (1.5 ± 0.8) 10⁻⁷ cm³/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made . |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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