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dc.contributor.author |
Kunets, V.P. |
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dc.contributor.author |
Kulish, N.R. |
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dc.contributor.author |
Strelchuk, V.V. |
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dc.contributor.author |
Nazarov, A.N. |
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Tkachenko, A.S. |
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dc.contributor.author |
Lysenko, V.S. |
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dc.contributor.author |
Lisitsa, M.P. |
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dc.date.accessioned |
2017-05-28T06:05:17Z |
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dc.date.available |
2017-05-28T06:05:17Z |
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dc.date.issued |
2003 |
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dc.identifier.citation |
Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 78.55.Et; 78.67.Hc; 71.55.Gs |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118011 |
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dc.description.abstract |
We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency. |
uk_UA |
dc.description.sponsorship |
This work has been partially supported by the joint project "Physics of Solid State Nanostructures" between the Ukrainian State Foundation of Fundamental Researches and the Russian Foundation for the Basic Researches. |
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dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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