Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
→
Переглянути статтю

dc.contributor.author	Dzhagan, V.N.
dc.contributor.author	Krasil'nik, Z.F.
dc.contributor.author	Lytvyn, P.M.
dc.contributor.author	Novikov, A.V.
dc.contributor.author	Valakh, M.Ya.
dc.contributor.author	Yukhymchuk, V.O.
dc.date.accessioned	2017-05-28T06:04:39Z
dc.date.available	2017-05-28T06:04:39Z
dc.date.issued	2003
dc.identifier.citation	Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs / V.N. Dzhagan, Z.F. Krasil'nik, P.M. Lytvyn, A.V. Novikov, M.Ya. Valakh, V.O. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 164-168. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 63.22.+m, 68.37.Ps, 68.65.Hb, 72.10.Di
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118010
dc.description.abstract	Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both structures. For multilayer structure a low-frequency Raman spectrum was obtained due to the scattering on folded acoustical phonons. The experimental values of the peaks are compared with those derived theoretically.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA