Effect of 1.9-MeV electron irradiation on characteristics of reactively-pressed TiB₂–TiС ceramic composites

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4
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dc.contributor.author	Totsky, I.N.
dc.contributor.author	Popov, A.Yu.
dc.contributor.author	Makara, V.A.
dc.date.accessioned	2017-05-26T18:57:57Z
dc.date.available	2017-05-26T18:57:57Z
dc.date.issued	2013
dc.identifier.citation	Effect of 1.9-MeV electron irradiation on characteristics of reactively-pressed TiB₂–TiС ceramic composites / I.N. Totsky, A.Yu. Popov, V.A. Makara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 382-386. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.80.Fe
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117816
dc.description.abstract	Considered in this paper is the effect of electron irradiation on the phasestructural state and micromechanical characteristics of reactively- and nonreactivelypressed TiB₂–TiС composite ceramic materials. It is shown that reactively-pressed specimens after irradiation demonstrate a growing tendency to phase formation, which considerably affects proceeding of relaxation processes in them. This special feature of reactively-pressed ceramics can improve radiation resistance of construction materials	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of 1.9-MeV electron irradiation on characteristics of reactively-pressed TiB₂–TiС ceramic composites	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA