Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4
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| dc.contributor.author | Belyaev, A.E. | |
| dc.contributor.author | Boltovets, N.S. | |
| dc.contributor.author | Konakova, R.V. | |
| dc.contributor.author | Kudryk, Ya.Ya. | |
| dc.contributor.author | Sorokin, V.M. | |
| dc.contributor.author | Sheremet, V.N. | |
| dc.contributor.author | Shynkarenko, V.V. | |
| dc.date.accessioned | 2017-05-26T17:46:22Z | |
| dc.date.available | 2017-05-26T17:46:22Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 07.20.-n, 85.30.Kk, 85.60.Jb | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117797 | |
| dc.description.abstract | Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it possible to increase accuracy of measuring the thermal resistance by determining the temperature at a linear section of the voltage−temperature curve. A possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V curves is shown. This enables one to simplify calculations and increase accuracy of measuring the thermal resistance. | uk_UA |
| dc.description.sponsorship | This work is the part of the project “Development and fabrication of a diagnostic complex for testing of microwave diodes based on wide-gap semiconductors (2008-2012)” and project No 31/4.2.3.1/1833 “Development of methods of investigation of contact systems for high-power light-emitting diodes using III group trinitride heterostructures”. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
