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dc.contributor.author |
Gudenko1, Yu.M. |
|
dc.contributor.author |
Vainberg, V.V. |
|
dc.contributor.author |
Poroshin, V.M. |
|
dc.contributor.author |
Tulupenko, V.M. |
|
dc.date.accessioned |
2017-05-26T16:31:56Z |
|
dc.date.available |
2017-05-26T16:31:56Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells/ Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 375-379. — Бібліогр.: 16 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 73.21.Fg, 73.50.Gr, Pz |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117768 |
|
dc.description.abstract |
The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong
lateral electric fields and conditions of carrier generation by the band-to-band light
absorption has been investigated experimentally. The data of the drift length, drift
mobility, and lifetime of charge carriers within the temperature range 20 to 77 K under
the electric field up to 1500 V/cm are presented. |
uk_UA |
dc.description.sponsorship |
The authors are grateful to Prof. O.G. Sarbey for
helpful discussion. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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