Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
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dc.contributor.author	Taghiyev, T.B.
dc.date.accessioned	2017-05-26T16:25:53Z
dc.date.available	2017-05-26T16:25:53Z
dc.date.issued	2011
dc.identifier.citation	Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.80.-x, 72.40.+w, 78.55
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117763
dc.description.abstract	The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it was established that after doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the photoconductivity value and the intensity of photoluminescence radiation increased in the investigated samples. A defect-formation model explaining the observed characteristics was proposed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA