Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
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dc.contributor.author	Steblenko, L.P.
dc.contributor.author	Koplak, O.V.
dc.contributor.author	Syvorotka, I.I.
dc.contributor.author	Kravchenko, V.S.
dc.date.accessioned	2017-05-26T16:01:06Z
dc.date.available	2017-05-26T16:01:06Z
dc.date.issued	2011
dc.identifier.citation	Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure / L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 334-338. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 07.57.-c, 61.43.Dq, 61.72.Dd, 68.35.Dv, 78.60.Hk, 78.66.-w
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117754
dc.description.abstract	Impurity states in Si/SiO₂ structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2 are sensitive to the action of magnetic field, which can be revealed due to changes in Si/SiO₂ optical properties. The most sensitive to magnetic field (about 35 per cent) is the intensity of the 1.9 eV CL band attributed to non-bridge oxygen atoms.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA