Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
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dc.contributor.author	Studenyak, I.P.
dc.contributor.author	Izai, V.Yu.
dc.contributor.author	Stephanovich, V.О.
dc.contributor.author	Panko, V.V.
dc.contributor.author	Kúš, P.
dc.contributor.author	Plecenik, A.
dc.contributor.author	Zahoran, M.
dc.contributor.author	Greguš, J.
dc.contributor.author	Roch, T.
dc.date.accessioned	2017-05-26T16:00:14Z
dc.date.available	2017-05-26T16:00:14Z
dc.date.issued	2011
dc.identifier.citation	Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / I.P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 77.80.Bh, 78.40.Ha
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117753
dc.description.abstract	Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied.	uk_UA
dc.description.sponsorship	This work was supported by the Slovak Research and Development Agency as well as Ministry of Education and Science, Youth and Sport of Ukraine.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA