Electrical properties of MIS structures with silicon nanoclusters

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 2
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Electrical properties of MIS structures with silicon nanoclusters

Bunak, S.V. ; Ilchenko, V.V. ; Melnik, V.P. ; Hatsevych, I.M. ; Romanyuk, B.N. ; Shkavro, A.G. ; Tretyak, O.V.

Інший ID: PACS 72.20.Ee, 73.40.Qv

URI: http://dspace.nbuv.gov.ua/handle/123456789/117722

Посилання: Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ.

Підтримка: This work was supported by Grant №M/90–2010 of Ministry for Education and Science of Ukraine.

Дата: 2011

Завантажень: 339

Electrical properties of MIS structures with silicon nanoclusters

Анотація:

The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics.

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