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dc.contributor.author |
Pavlovich, I.I. |
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dc.contributor.author |
Tomashik, Z.F. |
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dc.contributor.author |
Stratiychuk, I.B. |
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dc.contributor.author |
Tomashik, V.M. |
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dc.contributor.author |
Savchuk, O.A. |
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dc.contributor.author |
Kravtsova, A.S. |
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dc.date.accessioned |
2017-05-26T13:05:13Z |
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dc.date.available |
2017-05-26T13:05:13Z |
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dc.date.issued |
2011 |
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dc.identifier.citation |
Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions / I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 200-202. — Бібліогр.: 8 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 77.84.Bw, 81.65.Cf, Ps |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117719 |
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dc.description.abstract |
The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p-
(Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant
compositions was investigated. The dependences of dissolution rate of these
semiconductors on etchant composition, stirring, temperature and their shelf-time storage
have been studied. It was shown that the process of dissolution of the investigated
materials in the polishing solutions HNO₃–HCl is limited by the diffusion stages. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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