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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 2
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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
Інший ID:
PACS 61.72.Cc, Ji; 61.80.Fe, 61.82.Fk
Посилання:
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ.
Дата:
2011
Переглядів:
590
Завантажень:
303
Анотація:
The A-centers (VO) annealing and transformation of precursors to form stable
СiОi defects during these processes are described. It was found the necessity to take into
account annihilation of vacancy type defects with the interstitial type mobile defects to
describe the annealing of defects. It was shown that the energies of migration for vacancy
(V) and interstitial carbon atoms Сi that are defined by the degree of their localization in
silicon lattice at the temperature close to 550 K are equal Emv = 1.1 eV and Emc = 1.16 eV, accordingly.
