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dc.contributor.author |
Golovenchits, E.I. |
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dc.contributor.author |
Sanina, V.A. |
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dc.contributor.author |
Zalesskii, V.G. |
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dc.contributor.author |
Scheglov, M.P. |
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dc.date.accessioned |
2017-05-20T14:28:39Z |
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dc.date.available |
2017-05-20T14:28:39Z |
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dc.date.issued |
2010 |
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dc.identifier.citation |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ / E.I. Golovenchits, V.A. Sanina, V.G. Zalesskii, M.P. Scheglov // Физика низких температур. — 2010. — Т. 36, № 6. — С. 654–664. — Бібліогр.: 23 назв. — англ. |
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dc.identifier.issn |
0132-6414 |
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dc.identifier.other |
PACS: 75.47.Lx, 76.50.+g, 77.80.–e |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117176 |
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dc.description.abstract |
The state with a giant permittivity (ε~10⁴) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu₀.₈Ce₀.₂Mn₂O₅ in the investigations of x-ray diffraction, dielectric and magnetic properties, conductivity. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ε including as-grown 2D layers with doping impurities, charge carriers, and double-exchange coupled Mn³⁺–Mn⁴⁺ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size 1D superlattices, in which de Haas van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal cause formation of a layered superstructure consisting of charged layers (with an excess Mn³⁺ concentration) alternating with dielectric layers of the initial crystal — the ferroelectricity state due to charge ordering. Ferromagnetism results from double exchange between Mn³⁺ and Mn⁴⁺ ions through of charge carriers in the charged layers. |
uk_UA |
dc.description.sponsorship |
The authors would like to thank N.V. Zaitzeva for x-ray phase analysis of the samples.
The work was supported by the Russian Foundation for Basic Research (grant 08-02-00077) and Presidium of RAS (Programme 03). |
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dc.language.iso |
en |
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dc.publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
uk_UA |
dc.relation.ispartof |
Физика низких температур |
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dc.subject |
Магнитоэлектрические эффекты в сегнетомагнетиках |
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dc.title |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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