Photoluminescence of ZnSe nanocrystals at high excitation level

dc.contributor.author	Tishchenko, V.V.
dc.contributor.author	Kovalenko, A.V.
dc.date.accessioned	2017-05-20T11:29:27Z
dc.date.available	2017-05-20T11:29:27Z
dc.date.issued	2009
dc.identifier.citation	Photoluminescence of ZnSe nanocrystals at high excitation level / V.V. Tishchenko, A.V. Kovalenko // Физика низких температур. — 2009. — Т. 35, № 5. — С. 524-527. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 78.67.Bf, 78.67.Hc, 78.55.Et
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117168
dc.description.abstract	The excitation-dependent photoluminescence (PL) of ZnSe nanocrystals (NC) grown on GaAs (100) substrate was studied. The PL spectra observed corroborate previous observations of a bimodal size distribution of NC grown, and, in addition, evidence the existence of spectral diffusion with extend dependent on excitation power. Besides, it was also shown that at relatively intense excitation an extra band has arose in luminescence spectra due to biexcitons confined in NC of 3.5–4.0 nm size. The binding energy of these biexcitons was as large as 23 meV.	uk_UA
dc.description.sponsorship	Support of this work by Fundamental Research State Fund of Ukraine (Ô25.4/207 Project) is gratefully acknowledged.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Квантовые эффекты в полупpоводниках и диэлектриках	uk_UA
dc.title	Photoluminescence of ZnSe nanocrystals at high excitation level	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA