Doped nanoparticles for optoelectronics applications

Doped nanoparticles for optoelectronics applications

Godlewski, M. ; Wolska, E. ; Yatsunenko, S. ; Opalińska, A. ; Fidelus, J. ; Łojkowski, W. ; Zalewska, M. ; Kłonkowski, A. ; Kuritsyn, D.

Тема: XVII Уральская международная зимняя школа по физике полупроводников

Інший ID: PACS: 81.07.Wx, 78.47.–p, 78.55.–m, 78.55.Hx

URI: http://dspace.nbuv.gov.ua/handle/123456789/116764

Посилання: Doped nanoparticles for optoelectronics applications / M. Godlewski, E. Wolska, S. Yatsunenko // Физика низких температур. — 2009. — Т. 35, № 1. — С. 64-69. — Бібліогр.: 28 назв. — англ.

Підтримка: This work was partly supported by grant No 1 P03B 090 30 of MEiN, Poland

Дата: 2009

Завантажень: 838

Doped nanoparticles for optoelectronics applications

Анотація:

Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped with rare earth or/and transition metal ions. Arguments are presented that phosphors of nanosize may emit light more efficiently and thus be applied in practical optoelectronic devices.

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