Shevchenko, V.B.; Makara, V.A.; Vakulenko, O.V.; Dacenko, O.I.; Rudenko, O.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase ...