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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Сортувати за: Порядок: Результатів:

  • Bipolarons in anisotropic crystals and low dimensional structures 
    Kashirina, N.I.; Mozdor, E.V.; Pashitskij, E.A.; Sheka, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    We consider a simple bipolaron approach to description of anisotropic crystals in the strongcoupling limit. We have taken into account anisotropy of effective band masses and dielectric constants of crystals. The calculations ...
  • Characteristics of thermal lens induced in active rod of cw Nd:YAG laser 
    Khizhnyak, A.; Galich, G.; Lopiitchouk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The structure of thermal lens induced in active rod of cw Nd: YAG laser was investigated using the Mach-Zehnder interferometer and electronic speckle pattern interferometry (ESPI) system. It is shown that thermal lens has ...
  • Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes 
    Kosyachenko, L.A.; Rarenko, I.M.; Bodnaruk, O.O.; Frasunyak, V.M.; Sklyarchuk, V.M.; Sklyarchuk, Ye.F.; Sun Weiguo; Lu Zheng Xiong (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion ...
  • Chemical dissolution of indium arsenide in the Br₂-HBr solutions 
    Tomashik, Z.F.; Danylenko, S.G.; Tomashik, V.N.; Kravetski, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs ...
  • Conductivity of a two-phase composite: An approach based on bounds 
    Goncharenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Using the theory on the bounds, a general representation for effective conductivity of a two-phase composite is proposed. The representation contains two parameters that depend on the composite topology and can be determined ...
  • Conversion efficiency in silicon solar cells with spatially non-uniform doping 
    Sachenko, A.V.; Prima, N.A.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown ...
  • Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties 
    Atroshchenko, L.V.; Galkin, S.N.; Galchinetskii, L.P.; Lalayants, A.I.; Rybalka, I.A.; Ryzhikov, V.D.; Silin, V.I.; Starzhinskii, N.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown ...
  • Development of personal biodosimeter of UV radiation based on vitamin D photosynthesis in nematic liquid crystal matrix 
    Dyadyusha, A.G.; Gvozdovsky, I.A.; Salkova, E.N.; Terenetskaya, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A new approach to the problem of personal UV biodosimeter is described. Nematic liquid crystal (LC-805) is converted into induced cholesteric phase using photosensitive chiral dopant of steroid biomolecules (7-dehydrocholesterol ...
  • Dissolution of indium arsenide in nitric solutions of the hydrobromic acid 
    Tomashik, Z.F.; Danylenko, S.G.; Tomashik, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs ...
  • Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals 
    Bogoboyashchiy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation ...
  • Effect of emitter proprties on the conversion efficiency of silicon solar cells 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into ...
  • Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs 
    Venger, E.F.; Beliaev, A.A.; Boltovets, N.S.; Ermolovich, I.B.; Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Voitsikhovski, D.I.; Figielski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid ...
  • Efficiency limit for diffusion silicon solar cells at concentrated illumination 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V.; Serba, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive ...
  • Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds 
    Korsunskaya, N. E.; Markevich, I. V.; Dzhumaev, B. R.; Borkovskaya, L. V.; Sheinkman, M. K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated ...
  • Electro-physical properties of γ-exposed crystals of silicon and germanium 
    Dotsenko, Yu. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep ...
  • ENDOR study of irradiated tooth enamel 
    Ishchenko, S.; Vorona, I.; Okulov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    γ- and x-irradiated tooth enamel has been studied by EPR and ENDOR. Radiation-induced EPR spectrum of tooth enamel was found to be a superposition of signals with dominant contribution determined by CO₂- radicals. Two types ...
  • Evaluation of the efficiency of interband radiative recombination in high quality Si 
    Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small ...
  • Evidence for photochemical transformations in porous silicon 
    Shevchenko, V.B.; Makara, V.A.; Vakulenko, O.V.; Dacenko, O.I.; Rudenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase ...
  • Generalized model of holographic recording in photopolymer materials 
    Karpov, H.M.; Obukhovsky, V.V.; Smirnova, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The generalized diffusion model of holographic recording in photopolymer materials has been offered. The theoretical description of hologram formation process is based on the concept of free volume redistribution and using ...
  • Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide 
    Venger, Ye.F.; Milenin, V.V.; Ermolovich, I.B.; Konakova, R.V.; Voitsikhovskiy, D.I.; Hotovy, I.; Ivanov, V. N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, ...

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