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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Сортувати за: Порядок: Результатів:

  • Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers 
    Indutnyi, I.Z.; Shepeliavyi, P.E.; Indutnyi, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the ...
  • Residual atmosphere in vacuum fluorescent displays 
    Finkelshtein, S.H.; Sorokin, V.M.; Rakitin, S.A.; Sevostyanov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    This paper is devoted to problems of gassing in vacuum fluorescent displays (VFD). Technique of qualitative and quantitative analysis of residual atmosphere in VFDs is presented. Also, dynamics of residual gas pressure ...
  • Resistance thermometers based on the germanium films 
    Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature ...
  • Resonance generation of sum harmonic in static electric field 
    Venger, E.F.; Griban, V.M.; Melnichuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Using the group theory considerations, we investigate the nonlinear effect tensor (NET) for a crystal in a static electric field when a harmonic or the initial emission frequency approaches that of the excitonic absorption ...
  • Review of a monographs 
    Glinchuk, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation ...
  • Saddle point excitonic resonances in BiI3 layered single crystals 
    Kudryavtsev, O.O.; Lisitsa, M.P.; Motsnyi, F.V.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
  • Saturation of optical absorption in CdS single crystals 
    Malysh, N. I.; Kunets, V. P.; Valiukh, S. I.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the ...
  • Selective polarization of ferroelectrics in functional electronics 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The selective polarization technique of ferroelectrics representing sound-conductors and piezoelectric transformers in different devices of functional electronics is described. The feature of the technique is the ability ...
  • Self-consistent method for optimization of parameters of diode temperature sensors 
    Kulish, N.R.; Shwarts, Yu.M.; Borblik, V.L.; Venger, Ye.F.; Sokolov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically ...
  • Semiconductor sensors for dosimetry of epithermal neutrons 
    Litovchenko, P.G.; Moss, R.; Stecher-Rasmussen, F.; Appelman, K.; Barabash, L.I.; Kibkalo, T.I.; Lastovetsky, V.F.; Litovchenko, A.P.; Pinkovska, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes ...
  • Separate determination of thickness and optical parameters by surface plasmon resonance: accuracy consideration 
    Rengevych, O.V.; Shirshov, Yu.M.; Ushenin, Yu.V; Beketov, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Reliability and precision of characterization of surface layers by SPR method was evaluated with relation to the experimental conditions and the strategy of extracting the film parameters. Consideration is bound up with ...
  • Silicon-on-insulator technology for microelectromechanical applications 
    Usenko, A.Y.; Carr, W.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of ...
  • Size dependence of magnetic characteristics measured on separate nickel particles 
    Nepijko, S.A.; Wiesendanger, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Interference electron microscopy was applied to measure the coercive force, the magnetic saturation and the residual magnetization of separated nickel particles. Nickel particles with perfect sphericity and radius from 10 ...
  • Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing 
    Datsenko, L.I.; Auleytner, J.; Misiuk, A.; Klad'ko, V.P.; Machulin, V.F.; Bak-Misiuk, J.; Zymierska, D.; Antonova, I.V.; Melnyk, V.M.; Popov, V.P.; Czosnyka, T.; Choinski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx ...
  • The exact solution of self-consistent equations in the scanning near-field optic microscopy problem 
    Lozovski, V.; Bozhevolnyi, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The macroscopic approach that allows one to obtain an exact solution of the self-consistent equation of the Lippmann-Schwinger type is developed. The main idea of our method consist in usage of diagram technique for exact ...
  • Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique 
    Serdega, B.K.; Venger, Ye.F.; Nikitenko, Ye.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The ...
  • Thermoelectric property features of PbTe monocrystalline and polycrystalline films 
    Freik, D.M.; Zapukhlyak, R.I.; Lopjanka, M.A.; Mateik, G.D.; Mikhajlonka, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The equations of a regression were obtained by methods of mathematical planning of manyfactors experiments. These equations determine a dependence of thermoelectric parameters of PbTe thin films prepared by hot wall the ...
  • Thin films of organic molecular crystals (OMC) possessing type B lattice: spatial structure of dibenzotetraazaannulene film is related to its thickness 
    Snopok, B.A.; Lampeka, Ya.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Diffractometric and optical measurements showed that at considerable (>200 oK) difference between sublimation temperature and substrate one dibenzotetraazaannulene forms well oriented films structure of which depends on ...
  • TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment 
    Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Lytvyn, O.S.; Prokopenko, I.V.; Ivanov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal ...
  • Varistor-like current-voltage characteristic of porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Shutov, B.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms ...

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