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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Сортувати за: Порядок: Результатів:

  • Photoelectric peculiarities of electric photographic and holographic recording media with ionic dyes 
    Davidenko, N.A.; Ishchenko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The features of formation and relaxation of metastable connected states of cation-radical of carbazole and negatively charged fragment of dye molecule were investigated in the films of poly-N-epoxypropilcarbazole doped ...
  • Photogeneration of charge carriers in photosensitive organic semiconductors 
    Barabash, Yu.M.; Zabolotny, M.A.; Sokolov, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Thermalization processes in photosensitive organic semiconductors are theoretically considered from the standpoint of their main parameters, namely: thermalization time and thermalization length. These are shown to be ...
  • Photoluminescence excitation spectroscopy in narrow - gap Hg₁₋x₋yCd xMnyTe 
    Mazur, Yu. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New results on infrared photoluminescence and photoluminescence excitation spectroscopy around the fundamental energy gap in Hg₁₋x₋yCdxMnyTe single crystal are presented. A very strong electron-phonon coupling influencing ...
  • Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique 
    Movchan, S.; Sizov, F.; Tetyorkin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures ...
  • Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field 
    Kononchuk, G.L.; Yegorov, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    On the basis of the general Lamb model the set of six coupled nonlinear differential equations has been derived for two-mode l = 0.63 mm laser operation with the presence both amplitude and phase anisotropy and axial ...
  • Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • Pre- and postmelting of cadmium telluride 
    Shcherbak, L.P.; Feichouk, P.I.; Plevachouk, Yu.A.; Kopach, O.V.; Turyanska, L.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal ...
  • Properties of SiGe/Si heterostructures fabricated by ion implantation technique 
    Gomeniuk, Y.V.; Lysenko, V.S.; Osiyuk, I.N.; Tyagulski, I.P.; Valakh, M.Ya.; Yukhimchuk, V.A.; Willander, M.; Patel, C.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate ...
  • Quaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic application 
    Mazur, Yu.I.; Tarasov, G.G.; Kuzmenko, E.V.; Belyaev, A.E.; Hoerstel, W.; Kraak, W.; Masselink, W.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The peculiarities of the exchange interaction between the carrier spin and localized spin moments of magnetic ions in the close vicinity of semimetal-semiconductor transition have been studied on the example of semimagnetic ...
  • Radiation hardness of AlAs/GaAs-based resonant tunneling diodes 
    Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • Raman spectra of Ag- and Cu- photodoped chalcogenide films 
    Stronski, A.V.; Vlcek, M.; Stetsun, A.I.; Sklenar, A.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀Se₆₀ ) non-doped and photodoped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained, that for ...
  • Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers 
    Indutnyi, I.Z.; Shepeliavyi, P.E.; Indutnyi, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the ...
  • Residual atmosphere in vacuum fluorescent displays 
    Finkelshtein, S.H.; Sorokin, V.M.; Rakitin, S.A.; Sevostyanov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    This paper is devoted to problems of gassing in vacuum fluorescent displays (VFD). Technique of qualitative and quantitative analysis of residual atmosphere in VFDs is presented. Also, dynamics of residual gas pressure ...
  • Resistance thermometers based on the germanium films 
    Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature ...
  • Resonance generation of sum harmonic in static electric field 
    Venger, E.F.; Griban, V.M.; Melnichuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Using the group theory considerations, we investigate the nonlinear effect tensor (NET) for a crystal in a static electric field when a harmonic or the initial emission frequency approaches that of the excitonic absorption ...
  • Review of a monographs 
    Glinchuk, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation ...
  • Saddle point excitonic resonances in BiI3 layered single crystals 
    Kudryavtsev, O.O.; Lisitsa, M.P.; Motsnyi, F.V.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
  • Saturation of optical absorption in CdS single crystals 
    Malysh, N. I.; Kunets, V. P.; Valiukh, S. I.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the ...
  • Selective polarization of ferroelectrics in functional electronics 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The selective polarization technique of ferroelectrics representing sound-conductors and piezoelectric transformers in different devices of functional electronics is described. The feature of the technique is the ability ...
  • Self-consistent method for optimization of parameters of diode temperature sensors 
    Kulish, N.R.; Shwarts, Yu.M.; Borblik, V.L.; Venger, Ye.F.; Sokolov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically ...

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