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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Сортувати за: Порядок: Результатів:

  • Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands 
    Grigorchuk, N. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton ...
  • Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T.; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. ...
  • Mathematical model of photoacoustic microscopy with piezoelectric detection 
    Vertsanova, E.V.; Yakimenko, Yu.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Mathematical model is formulated for piezoelectric detection of the photoacoustics effect in optically semitransparent and thermally thick object with subsurface non-homogeneity in the case of free holding a piezodetector ...
  • Micro-Raman study of CNx composites subjected to high pressure treatment 
    Klyui, N.I.; Valakh, M.Ya.; Visotski, V.G.; Pascual, J.; Mestres, N.; Novikov, N.V.; Petrusha, I.A.; Voronkin, M.A.; Zaika, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed ...
  • Model of optical transitions in A₂B₆ wurtzite type quantum dots 
    Kunets, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone ...
  • Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes 
    Ivasiv, Z.F.; Sizov, F.F.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to ...
  • On problem of the rigorous diffraction quantitative description 
    Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New data showing an inaccuracy of Kirchhoff's description for the diffraction of the limited aperture light beams are presented. A series of the known experimental facts, which did not have an unequivocal interpretation ...
  • On the collection of photocurrent in solar cells with a contact grid 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T. ; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Pseudomorphic strained-layer AlxGa₁₋xAs/InyGa₁₋yAs/GaAs heterostructures have been studied by means of photoluminescence and Raman scattering. It is established the correlation between the photoluminescence line shape ...
  • Optical constants of surface layer on gadolinium gallium garnet: ellipsometric study 
    Belyaeva, A.I.; Galuza, A.A.; Grebennik, T.G.; Yuriyev, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A multiple angle ellipsometric method is used for measurements of thin film layers on substrates. The method evaluates fundamental optical constants and thicknesses of the film layers. Dielectric functions of the surface ...
  • Optically controlled 2D tunnelling in GaAs delta-doped p-n junction 
    Vitusevich, S. A.; Forster, A.; Belyaev, A. E.; Glavin, B. A.; Indlekofer, K. M.; Luth, H.; Konakova, R. V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers ...
  • Optical properties of thin metal films 
    Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Optical constants of metallic thin films made from: Ag, Au, Hf, Ir, Mo, Nb, Os, Pd, Pt, Re, Rh, Ru, Ta, W, Zr were determined on the basis of measured index of refraction in region of wavelength λ = 241216 Å. Two types ...
  • Optoelectronic sensor of longitudinal and angular displacements 
    Dlugaszek, A.; Jabczynski, J.; Janucki, J.; Skrzeczanowski, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the sensor a triangulation method of displacement measurement has been used. A method of sensor calibration using interferometric distance measurements has been elaborated. Linearity and resolution investigations have ...
  • Photoelectric peculiarities of electric photographic and holographic recording media with ionic dyes 
    Davidenko, N.A.; Ishchenko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The features of formation and relaxation of metastable connected states of cation-radical of carbazole and negatively charged fragment of dye molecule were investigated in the films of poly-N-epoxypropilcarbazole doped ...
  • Photogeneration of charge carriers in photosensitive organic semiconductors 
    Barabash, Yu.M.; Zabolotny, M.A.; Sokolov, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Thermalization processes in photosensitive organic semiconductors are theoretically considered from the standpoint of their main parameters, namely: thermalization time and thermalization length. These are shown to be ...
  • Photoluminescence excitation spectroscopy in narrow - gap Hg₁₋x₋yCd xMnyTe 
    Mazur, Yu. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New results on infrared photoluminescence and photoluminescence excitation spectroscopy around the fundamental energy gap in Hg₁₋x₋yCdxMnyTe single crystal are presented. A very strong electron-phonon coupling influencing ...
  • Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique 
    Movchan, S.; Sizov, F.; Tetyorkin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures ...
  • Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field 
    Kononchuk, G.L.; Yegorov, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    On the basis of the general Lamb model the set of six coupled nonlinear differential equations has been derived for two-mode l = 0.63 mm laser operation with the presence both amplitude and phase anisotropy and axial ...
  • Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • Pre- and postmelting of cadmium telluride 
    Shcherbak, L.P.; Feichouk, P.I.; Plevachouk, Yu.A.; Kopach, O.V.; Turyanska, L.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal ...

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