Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature ...