Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Organosilicon luminencent compositions for scintillation detectors 
    Andryuschenko, L.A.; Goriletsky, V.I.; Grinyov, B.V.; Gavrilyuk, V.P.; Zosim, D.I.; Skripkina, V.T.; Shershykov, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Application of organosilicon materials in the detection devices is one of the promising directions in the improvement of their characteristics. Especially efficient are these materials when used as a polymer base of the ...
  • Photoluminescence of pentacene solutions in n-pentyl-n-cyanobiphenyl 
    Piryatinskiy, Yu.; Furier, M.; Nazarenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We investigated photoluminescence (PL) spectra of pentacene (Pc) in the liquid- and solid-crystalline n-pentyl-n´-cyanobiphenyl (5CB) matrices. It was shown that the liquid-crystalline matrix behaves as a polar solvent ...
  • Short-wave photodetectors based on fine grain-sized poly-Si films 
    Agaev, F.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow ...
  • Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers 
    Stronski, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present paper is concerned with the peculiarities of the mechanism of irreversible photostructural transformations in As-S-Se layers. The starting point of the irreversible photostructural transformations is the state ...
  • Spectral properties of reflective interference filters 
    Pervak, V.Yu.; Poperenko, L.V.; Pervak, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The spectral properties of band reflective interference filters are investigated. The operation of the filter is based on the method of residual rays. Angular dependences of the filter transmission bandshape on the parameters ...
  • Technology and experimental studies of contacts for microwave diodes based on interstitial phases 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kurakin, A.M.; Milenin, V.V.; Soloviev, E.A.; Verimeychenko, G.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide ...
  • X-ray characterization of ZnSe single crystals doped with Mg 
    Fedorov, A.G.; Zagoruiko, Yu.A.; Fedorenko, O.A.; Kovalenko, N.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Doping of cubic ZnSe with certain impurities like Mg or Mn during crystal growth causes the increased contents of the hexagonal phase in the crystal or even the transformation to hexagonal wurtzite modification that possess ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис