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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • On thermal emission of small-sized radiator 
    Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Principle feasibility has been considered for a distant identification of a small-sized thermal radiator by means of detecting its thermal radiation. A single small-size radiator is phenomenologically treated within the ...
  • Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors 
    Shwarts, Yu.M.; Sokolov, V.N.; Shwarts, M.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon ...
  • Personalia Vadim Evgenovich Lashkaryov 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
  • Photovoltage and photocurrent spectroscopy of luminescent porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly ...
  • Polarization and angular peculiarities of IR emission of thin film semiconductor structures 
    Kollyukh, O.G.; Liptuga, A.I.; Morozhenko, V.O.; Pipa, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper thermal radiation from plane-parallel semiconductor layers was investigated. Shown is that spectra of thermal radiation from structures has an oscillating character caused by multi-beam interference. It was ...
  • Studies of CdHgTe as a material for x- and γ-ray detectors 
    Kosyachenko, L.A.; Kulchynsky, V.V.; Maslyanchuk, O.L.; Paranchych, S.Yu.; Sklyarchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and ...
  • Synthesis, recording and metrology of laser beams with phase singularities 
    Ivanovskyy, A.A.; Basistiy, I.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The main task of the work was obtaining the high efficient diffraction elements to generate high quality laser beams with phase singularities. The method of recording such diffractive structures on the organic photoresist ...
  • Temperature dependence of luminescence pecularities in oxygen doped ZnTe films 
    Malushin, N.V.; Skobeeva, V.M.; Smyntyna, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour ...
  • Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon 
    Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...
  • Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations 
    Pyziak, L.; Obermayr, W.; Zembrowska, K.; Kuzma, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. ...
  • Ultrasound influence on exciton emission of GaP light diodes 
    Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...

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