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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Electric properties of metal-organic lyotropic liquid crystals 
    Klimusheva, G.V.; Koval'chuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The electric properties of pure and dye-doped potassium caproate, which in a 1:1 water solution forms at room temperature ionic lyotropic liquid crystals (ILLC) of smectic A type [1], were investigated. It carried out the ...
  • Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment 
    Kunets, V.P.; Kulish, N.R.; Strelchuk, V.V.; Nazarov, A.N.; Tkachenko, A.S.; Lysenko, V.S.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the ...
  • Evolution of defective structure of the irradiated silicon during natural ageing 
    Fodchuk, I.M.; Gutsulyak, T.G.; Himchynsky, O.G.; Olijnich-Lysjuk, A.V.; Raransky, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance ...
  • Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties 
    Paranchych, S.Yu.; Paranchych, L.D.; Tanasyuk, Yu.V.; Romanyuk, V.R.; Makogonenko, V.M.; Yurtsenyuk, R.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition ...
  • High efficient solar cells and modules based on diamond-like carbon film - multicrystalline Si structures 
    Klyui, N.I.; Korneta, O.B.; Kostylyov, V.P.; Litovchenko, V.G.; Makarov, A.V.; Dikusha, V.N.; Neselevska, L.V.; Gorbulik, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the work the results of investigations of developed and produced solar cells (SC) and modules (SM) characteristics are presented. It has been shown that due to application of hydrogen plasma treatment and deposition of ...
  • Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals 
    Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect ...
  • Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs 
    Dzhagan, V.N.; Krasil'nik, Z.F.; Lytvyn, P.M.; Novikov, A.V.; Valakh, M.Ya.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both ...
  • Ion induced field effect in silicon in nematic liquid crystal cell 
    Kucheev, S.I.; Gritsenko, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was ...
  • One-dimensional warm electron transport in GaN quantum well wires at low temperatures 
    Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. ...
  • On thermal emission of small-sized radiator 
    Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Principle feasibility has been considered for a distant identification of a small-sized thermal radiator by means of detecting its thermal radiation. A single small-size radiator is phenomenologically treated within the ...
  • Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors 
    Shwarts, Yu.M.; Sokolov, V.N.; Shwarts, M.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon ...
  • Personalia Vadim Evgenovich Lashkaryov 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
  • Photovoltage and photocurrent spectroscopy of luminescent porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly ...
  • Polarization and angular peculiarities of IR emission of thin film semiconductor structures 
    Kollyukh, O.G.; Liptuga, A.I.; Morozhenko, V.O.; Pipa, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper thermal radiation from plane-parallel semiconductor layers was investigated. Shown is that spectra of thermal radiation from structures has an oscillating character caused by multi-beam interference. It was ...
  • Studies of CdHgTe as a material for x- and γ-ray detectors 
    Kosyachenko, L.A.; Kulchynsky, V.V.; Maslyanchuk, O.L.; Paranchych, S.Yu.; Sklyarchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and ...
  • Synthesis, recording and metrology of laser beams with phase singularities 
    Ivanovskyy, A.A.; Basistiy, I.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The main task of the work was obtaining the high efficient diffraction elements to generate high quality laser beams with phase singularities. The method of recording such diffractive structures on the organic photoresist ...
  • Temperature dependence of luminescence pecularities in oxygen doped ZnTe films 
    Malushin, N.V.; Skobeeva, V.M.; Smyntyna, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour ...
  • Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon 
    Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...
  • Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations 
    Pyziak, L.; Obermayr, W.; Zembrowska, K.; Kuzma, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. ...
  • Ultrasound influence on exciton emission of GaP light diodes 
    Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...

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