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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за автором "Strilchuk, O.N."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за автором "Strilchuk, O.N."

Сортувати за: Порядок: Результатів:

  • Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow ...
  • Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free ...
  • On the origin of 300 K near-band-edge luminescence in CdTe 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in ...

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