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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за автором "Fodchuk, I.M."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за автором "Fodchuk, I.M."

Сортувати за: Порядок: Результатів:

  • Determination of surface parameters of solids by methods of X-ray total external reflection 
    Balovsyak, S.V.; Fodchuk, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The ...
  • Evolution of defective structure of the irradiated silicon during natural ageing 
    Fodchuk, I.M.; Gutsulyak, T.G.; Himchynsky, O.G.; Olijnich-Lysjuk, A.V.; Raransky, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance ...
  • Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells 
    Fodchuk, I.M.; Gevyk, V.B.; Gimchinsky, O.G.; Kislovskii, E.N.; Kroytor, O.P.; Molodkin, V.B.; Olihovskii, S.I.; Pavelescu, E.M.; Pessa, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties ...

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