Baran, M.; Bulakh, B.; Korsunska, N.; Khomenkova, L.; Yukhymchuk, V.; Sheinkman, M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad ...