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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Сортувати за: Порядок: Результатів:

  • Design and testing of iodine cells for metrological laser application 
    Negriyko, A.M.; Boyko, O.V.; Kachalova, N.M.; Khodakovskiy, V.M.; Klochko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The design and performance of iodine vapor cells for frequency stabilized laser applications are presented. The traditional design of iodine vapor cell and special development of cell for fluorescence applications are ...
  • Destabilizing factors in operation of short-cavity He-Ne laser 
    Kononchuk, G.L.; Stukalenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The influence of longitudinal manetic field (MF) on a position of polarization planes (PPs) of the main modes (λ = 0.63 mm) in dependency on the generation frequency and off-axis mode presence was investigated in this work. ...
  • Detection and metrology of optical vortex helical wave fronts 
    Bogatiryova, G.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spatial structure of optical vortex helical wave fronts is for the first time directly tested using various interference arrangements and precise measuring techniques. Experimental data are compared with simulation results. ...
  • Determination of surface parameters of solids by methods of X-ray total external reflection 
    Balovsyak, S.V.; Fodchuk, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The ...
  • Dielectric response of disordered ferroelectrics with embedded charged clusters 
    Morozovska, A.N.; Eliseev, E.A.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified ...
  • Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals 
    Elizarov, A.I.; Kurbanov, K.R.; Bogoboyashchyy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Results of investigations of mercury vacancy diffusion in the narrow-gap Hg₁-xCdxTe crystals are presented. A new theory for mercury diffusion in a gradient of native defect concentration is proposed. The theory takes into ...
  • Distortion compensation technique for high resolution microscopy 
    Borovytsky, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper represents the technique for distortion compensation in digital images from high resolution optical microscopes. This technique is based on approximation of necessary pixel shifts as a power function that can be ...
  • Domino phase retrieval algorithm for structure determination using electron diffraction and high resolution transmission electron microscopy patterns 
    Chukhovskii, F.N.; Poliakov, A.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Direct method formalism to determine atomic structures using the electron diffraction data is here aimed at a general solution of the phase retrieval problem, consequently combining the electron diffraction (ED) and the ...
  • Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure 
    Aw, K.C.; Ibrahim, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ ...
  • Effect of constant electric field on electronic absorption spectra of dye-doped amorphous polymer films 
    Davidenko, N.A.; Chuprin, N.G.; Zabolotny, M.A.; Derevyanko, N.A.; Ishchenko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The change of an electronic absorption coefficient of polymer films, doped by symmetric cationic polymethine dye is researched in an external constant electric field. This effect are characterised by an increase of intensity ...
  • Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate 
    Kaganovich, E.B.; Kizyak, I.M.; Kirillova, S.I.; Konakova, R.V.; Lytvyn, O.S.; Lytvyn, P.M.; Manoilov, E.G.; Primachenko, V.E.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology ...
  • Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures 
    Abdizhaliev, S.K.; Ismailov, K.A.; Kamalov, A.B.; Kudrik, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For ...
  • Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures 
    Bletskan, D.I.; Lukyanchuk, O.R.; Bletskan, O.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Luminescence spectra of blue and green LEDs based on InxGa₁₋xN/AlyGa₁₋yN/GaN heterostructures with many quantum wells in the current range 0.1 to 10 mA have been studied besides the main electroluminescence band. In the ...
  • Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium 
    Gentsar, P.A.; Matveeva, L.A.; Kudryavtsev, A.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic ...
  • Electrical activity of misfit dislocations in GaAs-based heterostructures 
    Wosinski, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level ...
  • Electric and dielectric properties of glasses of Cu-Sb-S-I system 
    Rubish, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of ...
  • Electric properties of metal-organic lyotropic liquid crystals 
    Klimusheva, G.V.; Koval'chuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The electric properties of pure and dye-doped potassium caproate, which in a 1:1 water solution forms at room temperature ionic lyotropic liquid crystals (ILLC) of smectic A type [1], were investigated. It carried out the ...
  • Electron emission modulation effects in micro-size structures 
    Hartnagel, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation ...
  • Electron field emission from SiOx films 
    Evtukh, А.А.; Indutnyy, I.Z.; Lisovskyy, I.P.; Litvin, Yu.M.; Litovchenko, V.G.; Lytvyn, P.M.; Mazunov, D.O.; Rassamakin, Yu.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced ...
  • Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry 
    Ammerlaan, C.A.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Numerical calculations are presented for the energy levels of the rare-earth ion Er³⁺ in a crystalline field of cubic symmetry. A distinction is made between the five different point groups within the system of cubic ...

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