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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Optical recording of information pits in thin layers of chalcogenide semiconductors 
    Morozovska, A.N.; Kostyukevych, S.A.; Nikitenko, L.L.; Kryuchin, A.A.; Kudryavtsev, A.A.; Shepeliavyi, P.E.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, ...
  • Properties of optical microsensor based on observation of whispering-gallery modes 
    Datsyuk, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Formulae for the intensity of the resonant spontaneous electric-dipole emission are derived in the framework of classical electrodynamics and quantum optics making allowance for inhomogeneous light absorption. Using these ...
  • Recording of high efficiency diffraction gratings by He-Ne laser 
    Min'ko, V.I.; Shepeliavyi, P.E.; Dan'ko, V.A.; Romanenko, P.F.; Litvin, O.S.; Indutnyy, I.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching ...
  • Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures 
    Vlasenko, N.A.; Purwins, H.-G.; Denisova, Z.L.; Kononets, Ya.F.; Niedernostheide, F.-J.; Veligura, L.I.; Zuccaro, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    An overview of recent original results concerning self-organized pattern formation in the emission of bistable alternating current ZnS:Mn thin - film electroluminescent structures (TFELS) as a dissipative system is given. ...
  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
  • State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type 
    Dremlyuzhenko, S.G.; Zakharuk, Z.I.; Rarenko, I.M.; Srtebegev, V.M.; Voloshchuk, A.G.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause ...
  • The simple approach to determination of active diffused phosphorus density in silicon 
    Sasani, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. ...

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