Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за автором "Kenzai, C."

Результати 1-3 з 3

Accurate numerical modelling the GaAs MESFET current-voltage characteristics

Merabtine, N.; Khemissi, S.; Zaabat, M.; Belgat, M.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional ...
Active layer – semi-insulating substrate interface effect on GaAs MESFET components

Belgat, M.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space ...
An improved contribution to optimize Si and GaAs solar cell performances

Merabtine, N.; Amourache, S.; Bouaouina, M.; Zaabat, M.; Saidi, Y.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present ...

Результати 1-3 з 3

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