Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...