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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Research of structures with corrugated photoreceiving surface 
    Karimov, A.V.; Yodgorova, D.M.; Yakubov, E.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Goffered photoreceiver surface in active regions perspective for manufacturing photosensitive structures can be form by chemical and epitaxial technology. Microreliefs are created on initial surface of semiconductor material ...
  • RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures 
    Sghaier, H.; Bouzaiene, L.; Sfaxi, L.; Maaref, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is ...
  • Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures 
    Vlasenko, N.A.; Purwins, H.-G.; Denisova, Z.L.; Kononets, Ya.F.; Niedernostheide, F.-J.; Veligura, L.I.; Zuccaro, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    An overview of recent original results concerning self-organized pattern formation in the emission of bistable alternating current ZnS:Mn thin - film electroluminescent structures (TFELS) as a dissipative system is given. ...
  • Sensor based on a non-ideal heterojunction to indicate X-ray images 
    Smyntyna, V.A.; Borschak, V.A.; Kutalova, M.I.; Zatovskaya, N.P.; Balaban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is ...
  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
  • Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors 
    Savchenko, N.D.; Shchurova, T.N.; Popovych, K.O.; Rubish, I.D.; Leising, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation ...
  • Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties 
    Paranchych, S.Yu.; Tanasyuk, Yu.V.; Romanyuk, V.R.; Romanyuk, O.S.; Makogonenko, V.M.; Andriychuk, M.D.; Synylo, S.V.; Ivonyak, Yu.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical ...
  • Some features of polarization modulation in spectroscopy of optical and photoelectric effects 
    Kondratenko, S.V.; Matyash, I.A.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We analyze usage of modulation of electromagnetic radiation polarization in investigations of optical and photoelectric effects in anisotropic crystals. It is shown that when transmission spectra are studied with the ...
  • Spectra of the photo-electric phenomena physically differentiated on the light absorption factor 
    Berezhinsky, L.I.; Venger, E.F.; Matyash, I.E.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties ...
  • Spectrum of electron-hole pair in quantum dots of a semiconductor nanolaser: theory 
    Pokutnyi, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theory of laser generation on size-quantization levels in semiconductor quantum dots put in a semiconductor matrix is developed. The size of quantum dots mass of which comprises the active sphere of an injection laser ...
  • State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type 
    Dremlyuzhenko, S.G.; Zakharuk, Z.I.; Rarenko, I.M.; Srtebegev, V.M.; Voloshchuk, A.G.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause ...
  • Structural dependence of CsI(Tl) film scintillation properties 
    Ananenko, A.; Fedorov, A.; Lebedinsky, A.; Mateychenko, P.; Tarasov, V.; Vidaj, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Scintillating CsI(Tl) films were obtained by vacuum deposition on single crystalline LiF substrates and non-orienting glass substrates. Their structure and morphology were examined by X-ray diffraction and scanning electron ...
  • The change in optical characteristics of ZnO crystals under ruby laser irradiation 
    Markevich, I.V.; Kushnirenko, V.I.; Baidullaeva, A.; Bulakh, B.M.; Pobirovskiy, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The ...
  • The effect of structural-kinetic features of hologram formation on holographic properties of photopolymers 
    Smirnova, T.; Sakhno, O.; Lozenko, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A thermodynamic model of the holographic recording process in photopolymers have been developed. By the example of photopolymerizing compositions PPC-488 containing oligoetheracrylates and neutral components (NC) we have ...
  • The enhancement of optical processes near rough surface of metals 
    Dovbeshko, G.I.; Fesenko, O.M.; Shirshov, Yu.M.; Chegel, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Last decades the enhancement of optical transitions near metal surface was observed under study the optical processes (luminescence, Raman scattering, IR absorption). The effect consists in an essential increase of the ...
  • The influence of ion implantation by phosphorous on structural changes in porous silicon 
    Swiatek, Z.; Lytvynchuk, I.; Fodchuk, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and ...
  • Theory of free-carrier absorption in the presence of a quantizing magnetic field in quasi-one-dimensional quantum well structures 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The theory of free-carrier absorption is given for a quasi one-dimensional semiconducting structures in a quantizing magnetic field for the case when carriers are scattered by polar optical phonons and acoustic phonons ...
  • The simple approach to determination of active diffused phosphorus density in silicon 
    Sasani, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. ...
  • Tunable high-finesse narrow bandpass Fabry – Perot filter 
    Markov, V.B.; Khizhnyak, A.I.; Goren, V.; Cook, W.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper discusses the results of the analysis and experimental characterization of a narrow bandpass optical filter based on the Fabry – Perot interferometer configuration with a variable spacing between the mirrors ...
  • Two-dimensional photonic crystals as perspective materials of modern nanoelectronics 
    Karachevtseva, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photonic crystals are a dynamic direction of modern solid state physics. Today the intensive research (more than 80 %) is concentrated on two-dimensional photonic crystals which have functionality of three-dimensional ...

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