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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Characteristics of non-linear scattering of powerful pulses of Q-switched YAG:Nd³⁺ laser in an aqueous suspension of submicron-sized black-body particles has been investigated. Proposed is a model describing the results ...
  • Semchuk, O.Yu.; Bila, R.V.; Willander, M.; Karlsteen, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of a strong electromagnetic wave on the kinetic phenomena in ferromagnetic semiconductors (FMSC) is considered. To sequentialy consider this influence, we obtained quantum kinetic equations for electrons and ...
  • Slutskii, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The electrical field dependencies of current I and its variation under phonon pulses - ΔIph, were measured in δ-doped GaAs with n = 5*10¹¹ nm⁻². It was shown that if E< 1 V/cm and T = 2 K, E/I, and E/Iph linearly increase ...
  • Oleksenko, P.; Sorokin, V.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Using the light modulator based on electrically controlled reflection in the interface between isotropic dielectric and nematic liquid crystal has been viewed. The optical scheme of a laser projection microscope (LPM) with ...
  • Gomenyuk, O.V.; Nedilko, S.G.; Stus, N.V.; Chukova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Luminescence properties of the KAlP₂O₇ crystals doped with the chromium ions were investigated. Luminescence spectra consist of two main bands: one of them lies in the blue-green spectral region and the other lies in the ...
  • Oksanich, A.P.; Pritchin, S.E.; Vasheruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in ...
  • Vashchenko, V.; Patlashenko, Zh.; Chernysh, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Methods and physicotechnical facilities for examination, calibration and metrological testing of the main power spectral characteristics (total spectral sensitivity, scattered stray radiation, dynamic range) of the ...
  • Pikaruk, O.O.; Klimovskaya, A.I.; Driga, Yu.A.; Gule, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The analysis of photoluminescence of heterostructures with single elastic-strained In₀.₁₆Ga₀.₈₄As quantum wells is carried out in this work. It is shown, that filling of a quantum well with many quantum subbands results ...
  • Tikhonov, E.; Yashchuk, V.; Prygodjuk, O.; Bezrodny, V.; Filatov, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The luminescence properties of the Rodamine 6G in strongly scattering matrix in dependence of the medium parameters were examined. The luminescence spectrum of this object was found to be dependent on the scattering particle ...
  • Kruglenko, I.V.; Snopok, B.A.; Shirshov, Yu.M.; Rowell, F.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In the present work, the use of the cluster analysis method in the “fuzzy logic” concept for the optimization of the cross-selective sensor arrays (“electronic nose”, EN) is considered. This approach enables to purposefully ...
  • Mateleshko, N.; Mitsa, V.; Stronski, A.; Veres, M.; Koos, M.; Andriesh, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With ...
  • Talanin, V.I.; Talanin, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at ...
  • Maronchuk, I.E.; D’yachenko, A.M.; Minailov, A.I.; Kurak, V.V.; Chorny, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and ...
  • Blonskyy, I.V.; Gnatovskyy, A.V.; Zubrilin, N.G.; Pavlov, I.A.; Chernomorets, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Results of investigation of the fine structure existing in emission spectra of the transverse-discharge pumped XeCl laser are presented. Influence of selective components of the cavity on the structure of spectrum of induced ...
  • Zhirko, Yu.I.; Zharkov, I.P.; Kovalyuk, Z.D.; Pyrlja, M.M.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = ...
  • Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The intersubband optical absorption is investigated in parabolic quantum wires in the presence of a tilted magnetic fields. We show that for increasing magnetic field the intersubband absorption peak is shifted to higher ...
  • Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum ...
  • Morozovska, A.N.; Kostyukevych, S.A.; Nikitenko, L.L.; Kryuchin, A.A.; Kudryavtsev, A.A.; Shepeliavyi, P.E.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, ...
  • Indutnyy, I.Z.; Lisovskyy, I.P.; Mazunov, D.O.; Shepeliavyi, P.E.; Rudko, G.Yu.; Dan'ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, ...

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