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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Radiation effects on electronic circuits in a spatial environment 
    Merabtine, N.; Benslama, M.; Benslama, A.; Sadaoui, Dj. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The failings bound to the deterioration of the components under irradiations are complex and numerous. This paper describes the different kinds of radiations present in the space as well as their interactions with the ...
  • Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films 
    Gentsar, P.A.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after ...
  • Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals 
    Motsnyi, F.V.; Dorogan, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due ...
  • Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses 
    Mateleshko, N.; Mitsa, V.; Borkach, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, ...
  • Recording of high efficiency diffraction gratings by He-Ne laser 
    Min'ko, V.I.; Shepeliavyi, P.E.; Dan'ko, V.A.; Romanenko, P.F.; Litvin, O.S.; Indutnyy, I.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching ...
  • Recording the high efficient diffraction gratings by using He-Cd laser 
    Kostyukevych, S.A.; Morozovska, A.N.; Minko, V.I.; Shepeliavyi, P.E.; Kudryavtsev, A.A.; Rubish, V.M.; Rubish, V.V.; Tverdokhleb, I.V.; Kostiukevych, A.S.; Dyrda, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm⁻¹ have been recorded using As₄₀S₆₀–хSeх (х = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength λ = 440 ...
  • Research of structures with corrugated photoreceiving surface 
    Karimov, A.V.; Yodgorova, D.M.; Yakubov, E.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Goffered photoreceiver surface in active regions perspective for manufacturing photosensitive structures can be form by chemical and epitaxial technology. Microreliefs are created on initial surface of semiconductor material ...
  • RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures 
    Sghaier, H.; Bouzaiene, L.; Sfaxi, L.; Maaref, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is ...
  • Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures 
    Vlasenko, N.A.; Purwins, H.-G.; Denisova, Z.L.; Kononets, Ya.F.; Niedernostheide, F.-J.; Veligura, L.I.; Zuccaro, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    An overview of recent original results concerning self-organized pattern formation in the emission of bistable alternating current ZnS:Mn thin - film electroluminescent structures (TFELS) as a dissipative system is given. ...
  • Sensor based on a non-ideal heterojunction to indicate X-ray images 
    Smyntyna, V.A.; Borschak, V.A.; Kutalova, M.I.; Zatovskaya, N.P.; Balaban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is ...
  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
  • Simulation of the electronic states in the band gap for ZnS: Cu, Cl crystallophosphors 
    Savchenko, N.D.; Shchurova, T.N.; Popovych, K.O.; Rubish, I.D.; Leising, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation ...
  • Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties 
    Paranchych, S.Yu.; Tanasyuk, Yu.V.; Romanyuk, V.R.; Romanyuk, O.S.; Makogonenko, V.M.; Andriychuk, M.D.; Synylo, S.V.; Ivonyak, Yu.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical ...
  • Some features of polarization modulation in spectroscopy of optical and photoelectric effects 
    Kondratenko, S.V.; Matyash, I.A.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We analyze usage of modulation of electromagnetic radiation polarization in investigations of optical and photoelectric effects in anisotropic crystals. It is shown that when transmission spectra are studied with the ...
  • Spectra of the photo-electric phenomena physically differentiated on the light absorption factor 
    Berezhinsky, L.I.; Venger, E.F.; Matyash, I.E.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties ...
  • Spectrum of electron-hole pair in quantum dots of a semiconductor nanolaser: theory 
    Pokutnyi, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theory of laser generation on size-quantization levels in semiconductor quantum dots put in a semiconductor matrix is developed. The size of quantum dots mass of which comprises the active sphere of an injection laser ...
  • State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type 
    Dremlyuzhenko, S.G.; Zakharuk, Z.I.; Rarenko, I.M.; Srtebegev, V.M.; Voloshchuk, A.G.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause ...
  • Structural dependence of CsI(Tl) film scintillation properties 
    Ananenko, A.; Fedorov, A.; Lebedinsky, A.; Mateychenko, P.; Tarasov, V.; Vidaj, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Scintillating CsI(Tl) films were obtained by vacuum deposition on single crystalline LiF substrates and non-orienting glass substrates. Their structure and morphology were examined by X-ray diffraction and scanning electron ...
  • The change in optical characteristics of ZnO crystals under ruby laser irradiation 
    Markevich, I.V.; Kushnirenko, V.I.; Baidullaeva, A.; Bulakh, B.M.; Pobirovskiy, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The ...
  • The effect of structural-kinetic features of hologram formation on holographic properties of photopolymers 
    Smirnova, T.; Sakhno, O.; Lozenko, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A thermodynamic model of the holographic recording process in photopolymers have been developed. By the example of photopolymerizing compositions PPC-488 containing oligoetheracrylates and neutral components (NC) we have ...

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