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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes 
    Oksanich, A.P.; Pritchin, S.E.; Vasheruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in ...
  • Metrological support of satellite-borne UV-spectrometry using a backscattering technique 
    Vashchenko, V.; Patlashenko, Zh.; Chernysh, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Methods and physicotechnical facilities for examination, calibration and metrological testing of the main power spectral characteristics (total spectral sensitivity, scattered stray radiation, dynamic range) of the ...
  • “Multicoloured” superradiance in quantum heterostructures 
    Pikaruk, O.O.; Klimovskaya, A.I.; Driga, Yu.A.; Gule, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The analysis of photoluminescence of heterostructures with single elastic-strained In₀.₁₆Ga₀.₈₄As quantum wells is carried out in this work. It is shown, that filling of a quantum well with many quantum subbands results ...
  • Multiple scattering effect on luminescence of the dyed polymer matrix 
    Tikhonov, E.; Yashchuk, V.; Prygodjuk, O.; Bezrodny, V.; Filatov, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The luminescence properties of the Rodamine 6G in strongly scattering matrix in dependence of the medium parameters were examined. The luminescence spectrum of this object was found to be dependent on the scattering particle ...
  • Multisensor systems for gas analysis: optimization of arrays for classification of pharmaceutical products 
    Kruglenko, I.V.; Snopok, B.A.; Shirshov, Yu.M.; Rowell, F.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In the present work, the use of the cluster analysis method in the “fuzzy logic” concept for the optimization of the cross-selective sensor arrays (“electronic nose”, EN) is considered. This approach enables to purposefully ...
  • Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass 
    Mateleshko, N.; Mitsa, V.; Stronski, A.; Veres, M.; Koos, M.; Andriesh, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With ...
  • Nucleation, growth and transformation of microdefects in FZ-Si 
    Talanin, V.I.; Talanin, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at ...
  • Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy 
    Maronchuk, I.E.; D’yachenko, A.M.; Minailov, A.I.; Kurak, V.V.; Chorny, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and ...
  • On the nature of the fine structure in emission spectra of XeCl laser 
    Blonskyy, I.V.; Gnatovskyy, A.V.; Zubrilin, N.G.; Pavlov, I.A.; Chernomorets, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Results of investigation of the fine structure existing in emission spectra of the transverse-discharge pumped XeCl laser are presented. Influence of selective components of the cavity on the structure of spectrum of induced ...
  • On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals 
    Zhirko, Yu.I.; Zharkov, I.P.; Kovalyuk, Z.D.; Pyrlja, M.M.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = ...
  • Optical and acoustical phonon modes in superlattices with SiGe QDs 
    Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Optical intersubband transitions in quantum wires with an applied magnetic field 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The intersubband optical absorption is investigated in parabolic quantum wires in the presence of a tilted magnetic fields. We show that for increasing magnetic field the intersubband absorption peak is shifted to higher ...
  • Optical properties of dielectric layers with CeO₂ 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum ...
  • Optical recording of information pits in thin layers of chalcogenide semiconductors 
    Morozovska, A.N.; Kostyukevych, S.A.; Nikitenko, L.L.; Kryuchin, A.A.; Kudryavtsev, A.A.; Shepeliavyi, P.E.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, ...
  • Optical study of thermally induced phase separation in evaporated SiOx films 
    Indutnyy, I.Z.; Lisovskyy, I.P.; Mazunov, D.O.; Shepeliavyi, P.E.; Rudko, G.Yu.; Dan'ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, ...
  • Paramagnetic defects related to photoluminescence in SiOx films 
    Rudko, G.Yu.; Vorona, I.P.; Indutnyy, I.Z.; Ishchenko, S.S.; Shepeliavyi, P.E.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered ...
  • Partial polarization switching in ferroelectrics-semiconductors with charged defects 
    Morozovska, A.N.; Eliseev, E.A.; Cattan, E.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We propose the phenomenological description of ferroelectric disordering caused by charged defects in ferroelectric-semiconductors. The good agreement between the obtained experimental results for PZT films and theoretical ...
  • Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type ...
  • Peculiarities and asymmetry of polarization reversal in Pt/PZT-film/Pt:Ti/SiO₂/Si-substrate structures in pyroelectric response investigations 
    Bravina, S.L.; Cattan, E.; Morozovsky, N.V.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    By RF magnetron sputtering method the Pt/PZT-film/Pt:Ti-sublayer/SiO₂/Si-substrate structures were prepared and pyroelectric response amplitude and phase behaviour under external voltage application was investigated by ...
  • Photoelectrical characteristics of two-dimensional macroporous silicon structures 
    Karachevtseva, L.A.; Onischenko, V.F.; Karas, M.I.; Dandur’yants, O.I.; Sizov, F.F.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode ...

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