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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Individual glow bands of Mn²⁺ ions photoluminescence in plastically deformed ZnS single crystals 
    Prokofiev, T.A.; Kovalenko, A.V.; Polezaev, B.A.; Bulanyi, M.F.; Gorban, A.A.; Hmelenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The spectra of a photoluminescence (PL) in plastically deformed (PD) ZnS:Mn single crystals are investigated. It is shown that the PD processes cause change of a quantitative ratio between separate types of glow manganese ...
  • Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons 
    Dolgolenko, A.P.; Litovchenko, P.G.; Litovchenko, A.P.; Varentsov, M.D.; Lastovetsky, V.F.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and ...
  • Influence of high hydrostatic pressure on energetic structure and electron-lattice coupling of transition metal and rare earth related centers in solids 
    Grinberg, M.; Barzowska, J.; Gryk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present the results of the photoluminescence of the crystals doped with transition metals or rare earth ions obtained under high hydrostatic pressure up to 300 kbar applied in diamond anvil cells (DAC). We have focused ...
  • Investigation of nanophase separation in IR optical glasses As₄₀Se₆₀ using resonant Raman scattering 
    Mateleshko, N.; Mitsa, V.; Veres, M.; Koos, M.; Stronski, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Resonant Raman spectra of stoichiometric glass (g) g-As₄₀Se₆₀ have been investigated. It was observed that the increasing of excitation radiation energy hv>E₀ (E₀ is pseudogap width) changes a shape, intensity, and position ...
  • Investigation of β-CdP₂ crystals by laser spectroscopy methods 
    Patskun, I.I.; Slipukhina, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    β-CdP₂ CdP₂ single crystal of tetragonal modification is investigated by methods of lasermodulated spectroscopy at 293 K. The spectra of coherent two-photon absorption (TPA) have been measured and their theoretical ...
  • Laser-induced non-linear light scattering in a suspension of black-body particles 
    Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Characteristics of non-linear scattering of powerful pulses of Q-switched YAG:Nd³⁺ laser in an aqueous suspension of submicron-sized black-body particles has been investigated. Proposed is a model describing the results ...
  • Laser-induced photoconductivity of ferromagnetic semiconductors 
    Semchuk, O.Yu.; Bila, R.V.; Willander, M.; Karlsteen, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of a strong electromagnetic wave on the kinetic phenomena in ferromagnetic semiconductors (FMSC) is considered. To sequentialy consider this influence, we obtained quantum kinetic equations for electrons and ...
  • Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs 
    Slutskii, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The electrical field dependencies of current I and its variation under phonon pulses - ΔIph, were measured in δ-doped GaAs with n = 5*10¹¹ nm⁻². It was shown that if E< 1 V/cm and T = 2 K, E/I, and E/Iph linearly increase ...
  • Liquid crystal modulator in the channel of a laser projection microscope 
    Oleksenko, P.; Sorokin, V.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Using the light modulator based on electrically controlled reflection in the interface between isotropic dielectric and nematic liquid crystal has been viewed. The optical scheme of a laser projection microscope (LPM) with ...
  • Luminescence properties of KAlP₂O₇ crystals doped with chromium ions 
    Gomenyuk, O.V.; Nedilko, S.G.; Stus, N.V.; Chukova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Luminescence properties of the KAlP₂O₇ crystals doped with the chromium ions were investigated. Luminescence spectra consist of two main bands: one of them lies in the blue-green spectral region and the other lies in the ...
  • Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes 
    Oksanich, A.P.; Pritchin, S.E.; Vasheruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in ...
  • Metrological support of satellite-borne UV-spectrometry using a backscattering technique 
    Vashchenko, V.; Patlashenko, Zh.; Chernysh, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Methods and physicotechnical facilities for examination, calibration and metrological testing of the main power spectral characteristics (total spectral sensitivity, scattered stray radiation, dynamic range) of the ...
  • “Multicoloured” superradiance in quantum heterostructures 
    Pikaruk, O.O.; Klimovskaya, A.I.; Driga, Yu.A.; Gule, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The analysis of photoluminescence of heterostructures with single elastic-strained In₀.₁₆Ga₀.₈₄As quantum wells is carried out in this work. It is shown, that filling of a quantum well with many quantum subbands results ...
  • Multiple scattering effect on luminescence of the dyed polymer matrix 
    Tikhonov, E.; Yashchuk, V.; Prygodjuk, O.; Bezrodny, V.; Filatov, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The luminescence properties of the Rodamine 6G in strongly scattering matrix in dependence of the medium parameters were examined. The luminescence spectrum of this object was found to be dependent on the scattering particle ...
  • Multisensor systems for gas analysis: optimization of arrays for classification of pharmaceutical products 
    Kruglenko, I.V.; Snopok, B.A.; Shirshov, Yu.M.; Rowell, F.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In the present work, the use of the cluster analysis method in the “fuzzy logic” concept for the optimization of the cross-selective sensor arrays (“electronic nose”, EN) is considered. This approach enables to purposefully ...
  • Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass 
    Mateleshko, N.; Mitsa, V.; Stronski, A.; Veres, M.; Koos, M.; Andriesh, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With ...
  • Nucleation, growth and transformation of microdefects in FZ-Si 
    Talanin, V.I.; Talanin, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at ...
  • Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy 
    Maronchuk, I.E.; D’yachenko, A.M.; Minailov, A.I.; Kurak, V.V.; Chorny, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and ...
  • On the nature of the fine structure in emission spectra of XeCl laser 
    Blonskyy, I.V.; Gnatovskyy, A.V.; Zubrilin, N.G.; Pavlov, I.A.; Chernomorets, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Results of investigation of the fine structure existing in emission spectra of the transverse-discharge pumped XeCl laser are presented. Influence of selective components of the cavity on the structure of spectrum of induced ...
  • On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals 
    Zhirko, Yu.I.; Zharkov, I.P.; Kovalyuk, Z.D.; Pyrlja, M.M.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = ...

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