Sapaev, B.; Saidov, A.S.; Sapaev, I.B.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
(Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the ...