Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...