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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Mass-spectrometric investigations of gas evolution 
    Asnis, Yu.A.; Baranskii, P.I.; Babich, V.M.; Zabolotin, S.P.; Ptushinskii, Yu.G.; Sukretnyi, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in ...
  • Micropatterning in bistable cholesteric device with Bragg's reflection 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M.; Tishenko, V.G.; Tkach, V.M.; Yelshansky, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential ...
  • Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy 
    Morozovska, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains ...
  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures 
    Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...
  • Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta 
    Madatov, R.S.; Tagiyev, B.G.; Najafov, A.I.; Tagiyev, T.B.; Gabulov, I.A.; Shakili, Sh.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the ...
  • Simulation of strain fields in GaSb/InAs heteroepitaxial system 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network ...
  • Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x 
    Venger, E.F.; Knorozok, L.M.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and ...
  • The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure 
    Berrah, S.; Abid, H.; Boukortt, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The ...
  • The influence of Cr concentration on time resolution of GaAs detectors 
    Fedorenko, L.L.; Linnik, L.F.; Linnik, L.G.; Yusupov, M.M.; Solovyov, E.A.; Sirmulis, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Investigated in this work were the influence of Cr dopant concentration and technological conditions of doping on photoconductivity (PhC) kinetics, dependence of PhC signal magnitude on voltage applied as well as the dynamic ...
  • Third order nonlinear optical response of PbS quantum dots 
    Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Mohanta, D.; Choudhury, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    PbS quantum dots of the average size 10 nm are synthesized in the polymer matrix (PVA) following chemical route. Optical absorption spectra reveal a large blue shift from the bulk absorption cutoff wavelength. Instead of ...

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