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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Laser-induced incandescence in aqueous carbon black suspensions: the role of particle vaporization 
    Rulik, Ju.Ju.; Mikhailenko, N.M.; Zelensky, S.E.; Kolesnik, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Non-linear properties and the kinetics of laser-induced incandescence in aqueous carbon black suspensions are investigated. For explanation of the observed properties, a model, which takes into account a decrease of the ...
  • Organic iso-type pentacene – lead phthalocyanine heterostructures 
    Vertsimakha, Ya.I.; Lutsyk, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The photovoltaic properties of organic iso-type heterostructures based on pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at different substrate temperatures (Ts) are investigated. It is shown ...
  • Out-of-plane optical transmittance of 2D photonic macroporous silicon structures 
    Karachevtseva, L.A.; Glushko, A.E.; Ivanov, V.I.; Lytvynenko, O.O.; Onishchenko, V.F.; Parshin, K.A.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Optical transmission spectra of 2D photonic macroporous silicon structures are investigated. The absolute bandgap for high values of the out-of-plane component kz is situated between the second and third photonic bands. ...
  • The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film 
    Abbasov, Sh.M.; Nuruyev, I.R.; Tagiyev, T.B.; Agaverdiyeva, G.T.; Kerimova, T.I.; Ismayilova, G.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the effect of electron irradiation on photoelectrical and optical properties of Pb₁₋xMnxTe (0.01 ≤ x ≤ 0.05) epitaxial films containing 0.5…1 at. % of gallium with thicknesses of 1…5 µm, obtained by the ...

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