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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Gorishny, M.P.; Verbitsky, A.B.; Kovalchuk, A.V.; Kovalchuk, T.N.; Lutsyk, P.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The optical and photoelectrical properties of heterostructures (HS) SnO₂ТTTC₆₀Ag are investigated. The additional absorption of HS ТTT and C₆₀ is revealed in comparison with those for their components, which testifies ...
  • Hornostaev, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Block diagram and results of tests on gas-dynamic stands are represented to illustrate operation of the continuous ablation sensor, in which color light guides with a diameter of 1 mm are used. It is shown that the ...
  • Piryatinski, Yu.P.; Sevryukova, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    For supramolecular compounds with donor and acceptor fragments, coupled with each other by the π-conjugated methyn chain, it was ascertained an influence of Cl and Br atoms on the π-conjugation and charge transfer in ...
  • Primachenko, V.E.; Kirillova, S.I.; Chernobay, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    This overview deals with original works of authors as well as with works by native and foreign authors, which are devoted to this or close topics. It is written with account of the modern state of the problem, to solve ...
  • Timar, V.; Raluca Lucacel-Ciceo; Ardelean, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Glasses from xFe₂O₃·(100-x)[3B₂O₃·0.7PbO·0.3Ag₂O] system, with 0 ≤ x ≤ 20 mol.%, were prepared and investigated by means of two complementary spectroscopic methods, FT-IR absorption and Raman scattering in order to ...
  • Dvornik, O.V.; Chuiko, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The semiconductor Cd₃As₂ is known as a zero-gap material like HgTe or α-Sn but with the tetragonal lattice and in various crystalline forms. One of the forms has no symmetry center, and just this form is stable under ...
  • Kosogor, A.O.; Nowak, R.; Chrobak, D.; L’vov, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The process of indentation of GaAs single crystal by the conductive nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip and small area of GaAs platelet has been considered. The evolution ...
  • Osinniy, V.; Dybko, K.; Jedrzejczak, A.; Arciszewska, M.; Dobrowolski, W.; Story, T.; Radchenko, M.V.; Sichkovskiy, V.I.; Lashkarev, G.V.; Olsthoorn, S.M.; Sadowski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives ...
  • Kuzmenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    A new iterative Fourier transform method of synthesis of kinoforms is presented. Two object-depended filters (an amplitude filter and a phase one) are used in the object plane on the iterative calculation of a kinoform ...

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