Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11 за автором "Nazarov, A.N."

Результати 1-3 з 3

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.N.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

Nazarov, A.N.; Lysenko, V.S.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial ...
Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

Nazarov, A.N.; Gomeniuk, Y.V.; Gomeniuk, Y.Y.; Lysenko, V.S.; Gottlob, H.D.B.; Schmidt, M.; Lemme, M.C.; Czernohorsky, M.; Ostenc, H.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. ...

Результати 1-3 з 3

Пошук