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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Mueller-matrix diagnostics of optical properties inherent to polycrystalline networks of human blood plasma 
    Ushenko, Yu.A.; Olar, O.I.; Dubolazov, A.V.; Balanetskaya, V.O.; Unguryan, V.P.; Zabolotna, N.I.; Oleinichenko, B.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    This work is aimed at studying the possibilities of Mueller-matrix diagnostics applied to optically anisotropic birefringent polycrystalline networks inherent to amino acids in human blood plasma. Determined here are ...
  • Negative magnetoresistance of heavily doped silicon p-n junction 
    Borblik, V.L.; Rudnev, I.A.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant ...
  • Non-ohmic conduction in tin dioxide based ceramics with copper addition 
    Gaponov, A.V.; Glot, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The current-voltage characteristics and temperature dependences of electrical conductivity in SnO₂-Co₃O₄-Nb₂O₅-Cr₂O₃-CuO semiconductor ceramics are studied, and possible mechanism of non-ohmic conduction in these ...
  • On Raman spectra of water, its structure and dependence on temperature 
    Baschenko, S.M.; Marchenko, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Raman spectra of water within the temperature range 20 to 3 C were investigated. Best of all, the complex shape of the obtained spectra was approximated by four (or five) Gaussian-shaped peaks with their positions 3070, ...
  • Optical properties of ion implanted thin Ni films on lithium niobate 
    Lysiuk, V.O.; Staschuk, V.S.; Androsyuk, I.G.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Ion implantation by keV Ar⁺ ions creates blisters on the surface of thin Ni films deposited on lithium niobate and causes changes in optical properties and structure of Ni film and lithium niobate substrate. Processes of ...
  • Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals 
    Katerynchuk, V.M.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor ...
  • Simple method for SiC nanowires fabrication 
    Kiselov, V.S.; Lytvyn, O.S.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source ...
  • Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays 
    Sakhno, M.V.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some properties of printed antennas and arrays for uncooled silicon plasmon detector arrays based on field effect transistors are shortly discussed. Antenna geometry has been optimised for maximising gain at 300 GHz. It ...
  • Study of nanoporous in humidity-sensitive MgAl₂O₄ ceramics with positron annihilation lifetime spectroscopy 
    Klym, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that positron annihilation lifetime spectroscopy is a quite promising tool for nanostructural characterization of humidity-sensitive spinel-type MgAl₂O₄ceramics. The results have been achieved using ...
  • Thin films CdS/CdTe solar cells with different activation processes base layer 
    Khrypunov, G.S.; Shelest, T.N.; Li, T.N.; Meriuts, A.V.; Kovtun, N.A.; Makarov, A.V.; Avksentyeva, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Shown in this work is the possibility to create industrial technology for production of solar cells FTO/CdS/CdTe. The technology includes annealing in freon processing step for activation of cadmium telluride base layers ...
  • X-ray study of dopant state in highly doped semiconductor single crystals 
    Shul’pina, I.L.; Kyutt, R.N.; Ratnikov, V.V.; Prokhorov, I.A.; Bezbakh, I.Zh.; Shcheglov, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of ...

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