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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Dmitruk, N.L.; Borkovskaya, O.Yu.; Naumenko, D.O.; Havrylenko, T.S.; Basiuk, E.; Shpilevsky, E.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The effect of nanosize metal overlayer, both evaporated on C₆₀ films (Bi, In) and attached as nanoparticles of (Ag, Au), on the optical parameters of C₆₀ films near the fundamental absorption edge has been studied. The ...
  • Dmitriev, M.V.; Isaienko, O.Iu.; Ivanisik, А.І.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper provides experimental and theoretical results of stimulated Raman scattering Stokes component indicatrix asymmetry study. Theoretical results demonstrate that asymmetry is caused by influence of Stokes/anti-Stokes ...
  • Borschak, V.A.; Brytavskyi, Ie.V.; Smyntyna, V.A.; Lepikh, Ya.I.; Balaban, A.P.; Zatovskaya, N.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that ...
  • Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of ...
  • Lozovski, V.; Lysenko, V.; Spivak, M.; Sterligov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new method for decontamination of biological liquids (blood or blood plasma, for instance) from viruses is proposed. The method is based on the efficient attraction between nanoparticles and nanostructured surface, ...
  • Bacherikov, Yu.Yu.; Boltovets, N.S.; Konakova, R.V.; Kolyadina, E.Yu.; Ledn’ova, T.M.; Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). ...
  • Kovalyuk, Z.D.; Duplavyy, V.Y.; Sydor, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of ...
  • Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The ...
  • Felinskyi, S.G.; Korotkov, P.A.; Felinskyi, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Physical conditions for occurrence of the spectral bands with the negative dielectric permittivity in nonmagnetic crystalline media in the terahertz waveband have been studied in this work. It has been shown that damping ...
  • Vakiv, M.; Golovchak, R.; Chalyy, D.; Shpotyuk, M.; Ubizskii, S.; Shpotyuk, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that ...
  • Jivani, A.R.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where ...
  • Korovin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The ultrafast interaction between high power laser light and plasma has been studied theoretically. The theoretical simulations are based on the nonlinear Schrödinger equation taking into account group velocity dispersion, ...

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