Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15 за автором "Svezhentsova, K.V."

Результати 1-2 з 2

Photoelectrical properties of nanoporous silicon

Luchenko, A.I.; Svezhentsova, K.V.; Melnichenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

The optimal composition of etchant solution and etching time for chemical treatment to obtain nanoporous Si have been determined. Influence of nanocrystal dimensions on the electrophysical and photoelectrical properties ...
Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon

Luchenko, A.I.; Melnichenko, M.M.; Svezhentsova, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

. Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical ...

Результати 1-2 з 2

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