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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за автором "Shepeliavyi, P.E."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за автором "Shepeliavyi, P.E."

Сортувати за: Порядок: Результатів:

  • Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist 
    Dan’ko, V.A.; Dorozinsky, G.V.; Indutnyi, I.Z.; Myn’ko, V.I.; Ushenin, Yu.V.; Shepeliavyi, P.E.; Lukaniuk, M.V.; Korchovyi, A.A.; Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface ...
  • Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device 
    Chegel, V.I.; Lytvyn, V.K.; Lopatynskyi, A.M.; Shepeliavyi, P.E.; Lytvyn, O.S.; Goltvyanskyi, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    In this work, we describe a method of surface-enhanced fluorometry, based on the phenomenon of localized surface plasmon resonance in unordered gold nanostructure arrays. The theoretical approach for the model system “gold ...
  • Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix 
    Michailovska, K.V.; Indutnyi, I.Z.; Kudryavtsev, O.O.; Sopinskyy, M.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation ...

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