Перегляд за автором "Yurijchuk, I.M."

Сортувати за: Порядок: Результатів:

  • Melnichuk, S.V.; Mikhailevsky, Y.M.; Rarenko, I.M.; Yurijchuk, I.M. (Condensed Matter Physics, 2000)
    Electronic band structure of the diluted magnetic semiconductor Cd₁₋x Mn x Te [100] ideal surface is calculated by the semiempirical tight- binding method in the framework of sps*-model. Surface bands, ...
  • Nikoniuk, E.S.; Zakharuk, Z.I.; Rarenko, I.M.; Kuchma, M.I.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the ...
  • Melnychuk, S.V.; Yurijchuk, I.M. (Condensed Matter Physics, 1999)
    Energy spectrum of the transition metal impurity which substitutes a cation in a zink-blende structure semiconductor with an ideal surface is investigated theoretically. Model Hamiltonian of the semiconductor is treated by ...
  • Dremlyuzhenko, S.G.; Zakharuk, Z.I.; Rarenko, I.M.; Srtebegev, V.M.; Voloshchuk, A.G.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause ...