Перегляд за автором "Sklenar, A."

Сортувати за: Порядок: Результатів:

  • Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication 
    Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Photoinduced structural changes in As₁₀₀₋xSx layers 
    Stronski, A.; Vlcek, M.; Sklenar, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission ...
  • Raman spectra of Ag- and Cu- photodoped chalcogenide films 
    Stronski, A.V.; Vlcek, M.; Stetsun, A.I.; Sklenar, A.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀Se₆₀ ) non-doped and photodoped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained, that for ...