Перегляд за автором "Eaves, L."

Сортувати за: Порядок: Результатів:

  • Capacitance spectroscopy of InAs self-assembled quantum dots 
    Martin, P.M.; Belyaev, A.E.; Eaves, L.; Main, P.C.; Sheard, F.W.; Ihn, T.; Henini, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    Capacitance spectroscopy is used to study electronic properties of self-assembled InAs quantum dots. The capacitance-voltage, C(V), measurements in combination with the magneto-capacitance, C(B), results make it possible ...
  • Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions 
    Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...