Перегляд за автором "Bulakh, B.M."

Сортувати за: Порядок: Результатів:

  • Metastable interstitials in CdSe and CdS crystals 
    Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Korsunska, N.O.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The ...
  • Silver-related local centres in cadmium sulfide 
    Borkovskaya, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular ...
  • The change in optical characteristics of ZnO crystals under ruby laser irradiation 
    Markevich, I.V.; Kushnirenko, V.I.; Baidullaeva, A.; Bulakh, B.M.; Pobirovskiy, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The ...
  • The nature of red emission in porous silicon 
    Khomenkova, L.Yu.; Korsunska, N.E.; Bulakh, B.M.; Sheinkman, M.K.; Stara, T.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was ...
  • Zn and Mn impurity effect on electron and luminescent properties of porous silicon 
    Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...